A technical paper titled “CFET Beyond 3 nm: SRAM Reliability under Design-Time and Run-Time Variability” was published by researchers at TU Munich and IIT Kanpur. Find the technical paper here. May ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, ...
(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
A transistor is a tiny but powerful electronic component that acts like a switch or an amplifier. It is made from a semiconductor material, usually silicon, and has three legs for connection to ...
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